parameters symbol device number v units repetitive peak off-state voltage and repetitive peak reverse voltage (1) vdrm & vrrm f cr100-6 400 volt rms on-state current at ta=57 and conduction angle of 180o i t (rms) 0.8 amp peak surge (non-repetitive)on-state current, ? cycle ,at 50hz or 60hz i tsm 8 amp peak gate-trigger current for 3 sec , max i gtm 0.8 amp peak gate-power dissipation at igt Q igtm p gm 0.1 watt average gate-power dissipation p g (av) 0.01 watt peak gate reverse voltage v rgm 6 v peak off-state current, (1)ta=25 vdrm & vrrm=max. rating ta=125 i drm & i rrm 10 200 a max maximum on-state voltage. (peak) at tc=25 and it =rated amps v tm 1.7 volt max dc holding current,(1) i ho 5 ma max critical rate-of-rise of off-state voltage.(1) gate open,ta=110 critical dv/dt 5 v/ sec dc gate ?trigger current for anode voltage=7vdc, rl=100 i gt 200 a max dc gate ?trigger voltage for anode voltage=7vdc, rl=100 v gt 0.8 volt max gate-controlled turn-on time td+tr igt=10ma tgt 2.2 sec thermal resistance , junction-to-case r j-c 75 /watt typ storage temperature range tstg -40 to + 150 operating temperature range , tj toper -40 to + 110 maximum ratings and electrical characteristics (ta=25 c ) feature: driven directly with ic and mos device. feature proprietary, void-free glass passivate chips. available in voltage ratings from 200 to 600 volts. (vdrm and vrrm) (1)rgk=1k date:2005/07/14 rev.no 1. sensitive gate trigger current. designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors. 1 2 3 to-92 1. cathode 2. gate 3. anode description mechanical dimensions FCR100-6
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